MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

Hao-Chung Kuo*, H. H. Yao, Y. H. Chang, Y. A. Chang, M. Y. Tsai, J. Hsieh, Edward Yi Chang, S. C. Wang

*Corresponding author for this work

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