MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

Hao-Chung Kuo; H. H. Yao; Y. H. Chang; Y. A. Chang; M. Y. Tsai; J. Hsieh; Edward Yi Chang; S. C. Wang

doi:10.1016/j.jcrysgro.2004.08.092

MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

Hao-Chung Kuo^*, H. H. Yao, Y. H. Chang, Y. A. Chang, M. Y. Tsai, J. Hsieh, Edward Yi Chang, S. C. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25GHz/(mA) ^1/2 . The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.

Original language	English
Pages (from-to)	538-542
Number of pages	5
Journal	Journal of Crystal Growth
Volume	272
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.08.092
State	Published - 10 Dec 2004

Keywords

A3. Metalorganic chemical vapor deposition
B2. Semiconducting indium compounds
B3. Optical fiber devices
B3. Vertical cavity surface emitting laser
Bl. Antimonides

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@article{ef1f20b4581048e48660f90ad746e76a,

title = "MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission",

abstract = " 1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25GHz/(mA) 1/2 . The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.",

keywords = "A3. Metalorganic chemical vapor deposition, B2. Semiconducting indium compounds, B3. Optical fiber devices, B3. Vertical cavity surface emitting laser, Bl. Antimonides",

author = "Hao-Chung Kuo and Yao, {H. H.} and Chang, {Y. H.} and Chang, {Y. A.} and Tsai, {M. Y.} and J. Hsieh and Chang, {Edward Yi} and Wang, {S. C.}",

year = "2004",

month = dec,

day = "10",

doi = "10.1016/j.jcrysgro.2004.08.092",

language = "English",

volume = "272",

pages = "538--542",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4 SPEC. ISS.",

}

MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission. / Kuo, Hao-Chung; Yao, H. H.; Chang, Y. H.; Chang, Y. A.; Tsai, M. Y.; Hsieh, J.; Chang, Edward Yi; Wang, S. C.

In: Journal of Crystal Growth, Vol. 272, No. 1-4 SPEC. ISS., 10.12.2004, p. 538-542.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

AU - Kuo, Hao-Chung

AU - Yao, H. H.

AU - Chang, Y. H.

AU - Chang, Y. A.

AU - Tsai, M. Y.

AU - Hsieh, J.

AU - Chang, Edward Yi

AU - Wang, S. C.

PY - 2004/12/10

Y1 - 2004/12/10

N2 - 1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25GHz/(mA) 1/2 . The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.

AB - 1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25GHz/(mA) 1/2 . The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting indium compounds

KW - B3. Optical fiber devices

KW - B3. Vertical cavity surface emitting laser

KW - Bl. Antimonides

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U2 - 10.1016/j.jcrysgro.2004.08.092

DO - 10.1016/j.jcrysgro.2004.08.092

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AN - SCOPUS:9944257884

VL - 272

SP - 538

EP - 542

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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IS - 1-4 SPEC. ISS.

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