1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25GHz/(mA) 1/2 . The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.
- A3. Metalorganic chemical vapor deposition
- B2. Semiconducting indium compounds
- B3. Optical fiber devices
- B3. Vertical cavity surface emitting laser
- Bl. Antimonides