MOCVD growth of highly strained InGaAsiSb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

Hao-Chung Kuo*, H. H. Yao, Y. H. Chang, Y. A. Chang, M. Y. Tsai, J. Hsieh, Edward Yi Chang, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25GHz/(mA) 1/2 . The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GalnAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.

Original languageEnglish
Pages (from-to)538-542
Number of pages5
JournalJournal of Crystal Growth
Volume272
Issue number1-4 SPEC. ISS.
DOIs
StatePublished - 10 Dec 2004

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting indium compounds
  • B3. Optical fiber devices
  • B3. Vertical cavity surface emitting laser
  • Bl. Antimonides

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