MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

Y. A. Chang*, J. T. Chu, C. T. Ko, Hao-Chung Kuo, C. F. Lin, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In 0.45 Ga 0.55 As:Sb/GaAs (1.3 μm) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In 0.45 Ga 0.55 As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 μm with narrow full-width at half-maximum (FWHM) of 35.9 meV. For the fabricated VCSEL with 5 μm diameter oxide-confined aperture, a room-temperature (RT) threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 μm emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz.

Original languageEnglish
Pages (from-to)550-553
Number of pages4
JournalJournal of Crystal Growth
Volume287
Issue number2
DOIs
StatePublished - 25 Jan 2006

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. InGaAs:Sb
  • B2. Semiconductor
  • B3. Laser diodes
  • B3. Optical fiber devices
  • B3. VCSELs

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