Abstract
In 0.45 Ga 0.55 As:Sb/GaAs (1.3 μm) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In 0.45 Ga 0.55 As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 μm with narrow full-width at half-maximum (FWHM) of 35.9 meV. For the fabricated VCSEL with 5 μm diameter oxide-confined aperture, a room-temperature (RT) threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 μm emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz.
Original language | English |
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Pages (from-to) | 550-553 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 287 |
Issue number | 2 |
DOIs | |
State | Published - 25 Jan 2006 |
Keywords
- A3. Metalorganic chemical vapor deposition
- B1. InGaAs:Sb
- B2. Semiconductor
- B3. Laser diodes
- B3. Optical fiber devices
- B3. VCSELs