MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

Y. A. Chang; J. T. Chu; C. T. Ko; Hao-Chung Kuo; C. F. Lin; S. C. Wang

doi:10.1016/j.jcrysgro.2005.10.030

MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

Y. A. Chang^*, J. T. Chu, C. T. Ko, Hao-Chung Kuo, C. F. Lin, S. C. Wang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In _0.45 Ga _0.55 As:Sb/GaAs (1.3 μm) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In _0.45 Ga _0.55 As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 μm with narrow full-width at half-maximum (FWHM) of 35.9 meV. For the fabricated VCSEL with 5 μm diameter oxide-confined aperture, a room-temperature (RT) threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 μm emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz.

Original language	English
Pages (from-to)	550-553
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.030
State	Published - 25 Jan 2006

Keywords

A3. Metalorganic chemical vapor deposition
B1. InGaAs:Sb
B2. Semiconductor
B3. Laser diodes
B3. Optical fiber devices
B3. VCSELs

Access to Document

10.1016/j.jcrysgro.2005.10.030

Link to publication in Scopus

Fingerprint Dive into the research topics of 'MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser'. Together they form a unique fingerprint.

Cite this

@article{8f8a3958ee7948b394b9b9f3c0223503,

title = "MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser",

abstract = " In 0.45 Ga 0.55 As:Sb/GaAs (1.3 μm) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In 0.45 Ga 0.55 As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 μm with narrow full-width at half-maximum (FWHM) of 35.9 meV. For the fabricated VCSEL with 5 μm diameter oxide-confined aperture, a room-temperature (RT) threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 μm emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz.",

keywords = "A3. Metalorganic chemical vapor deposition, B1. InGaAs:Sb, B2. Semiconductor, B3. Laser diodes, B3. Optical fiber devices, B3. VCSELs",

author = "Chang, {Y. A.} and Chu, {J. T.} and Ko, {C. T.} and Hao-Chung Kuo and Lin, {C. F.} and Wang, {S. C.}",

year = "2006",

month = jan,

day = "25",

doi = "10.1016/j.jcrysgro.2005.10.030",

language = "English",

volume = "287",

pages = "550--553",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

AU - Chang, Y. A.

AU - Chu, J. T.

AU - Ko, C. T.

AU - Kuo, Hao-Chung

AU - Lin, C. F.

AU - Wang, S. C.

PY - 2006/1/25

Y1 - 2006/1/25

N2 - In 0.45 Ga 0.55 As:Sb/GaAs (1.3 μm) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In 0.45 Ga 0.55 As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 μm with narrow full-width at half-maximum (FWHM) of 35.9 meV. For the fabricated VCSEL with 5 μm diameter oxide-confined aperture, a room-temperature (RT) threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 μm emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz.

AB - In 0.45 Ga 0.55 As:Sb/GaAs (1.3 μm) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In 0.45 Ga 0.55 As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 μm with narrow full-width at half-maximum (FWHM) of 35.9 meV. For the fabricated VCSEL with 5 μm diameter oxide-confined aperture, a room-temperature (RT) threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 μm emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. InGaAs:Sb

KW - B2. Semiconductor

KW - B3. Laser diodes

KW - B3. Optical fiber devices

KW - B3. VCSELs

UR - http://www.scopus.com/inward/record.url?scp=30344478573&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.10.030

DO - 10.1016/j.jcrysgro.2005.10.030

M3 - Article

AN - SCOPUS:30344478573

VL - 287

SP - 550

EP - 553

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -