MOCVD-Grown InGaN nanowires for photovoltaic applications

Hao-Chung Kuo, T. S. Oh, Gawn Ho Jung, Mark Hendrix, S. J. Kim, Max Shtein, X. Pan, P. C. Ku

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Dislocation-free, vertically-aligned, and strain-relaxed InGaN nanowires were realized using metal-organic chemical vapor deposition. The indium composition is continuously tunable from 3.4 to 2.5 eV, with the latter being significant for a four-junction photovoltaic device. Growth mechanism, morphological evolution, and optical as well as structural properties were analyzed. Photovoltaic response was also shown.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1064-1067
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period8/06/1413/06/14

Keywords

  • indium gallium nitride
  • multijunction photovoltaic cells
  • thin-film solar cells

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