Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li*, Chieh Yang Chen, Yu Yu Chen, Sheng Chia Hsu, Wen Tsung Huang, Sheng Yuan Chu

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (1 1 0) and (1 0 0) orientations of the devices. We further analyze four devices with different surface roughness along (1 0 0) and (1 0 0) orientations to demonstrate the influence of surface roughness on the total effective mobility.

Original languageEnglish
Pages (from-to)357-359
Number of pages3
JournalMicroelectronic Engineering
Volume109
DOIs
StatePublished - 2013

Keywords

  • Device simulation
  • FinFET
  • Interface roughness
  • Mobility
  • Orientations
  • Silicon germaniums

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