Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-vapor pre-gate oxide cleaning

Tien-Sheng Chao*, Yu Hsin Lin, Wen Luh Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance, In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111).

Original languageEnglish
Pages (from-to)625-627
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number9
DOIs
StatePublished - 1 Sep 2004

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