Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Tsung Yi Lu*, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.

Original languageEnglish
Pages (from-to)267-269
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number4
DOIs
StatePublished - 1 Apr 2005

Keywords

  • Mobility
  • nMOSFET
  • Poly-Si
  • Strain

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