Mobility degradation analysis for la2O3 nmosfet

Jin Aun Ng*, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Takeo Hattori, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Al/La2O3/SiO2/p-Si nMOSFET with various thicknesses of the La2O3 layer and the SiO2 interfacial layer (IL) were fabricated. We discussed mobility degradation caused by fixed charge and trapped charge at the La2O3/SiO 2 interface. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages329-338
Number of pages10
Edition1
StatePublished - 2006
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 7 May 200612 May 2006

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period7/05/0612/05/06

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