Mixed mode simulation of slow transient effects in AlGaAs/GaAs HEMT inverters

Ta-Hui Wang*, Sheng Jyh Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A mixed level device and circuit analysis has been performed to study the DX-trap-induced slow transient effects on the performance degradation of AlGaAs/GaAs HEMT (high electron mobility transistor) circuits. The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in DCFL (direct coupled FET logic) HEMT inverters have been simulated. It is shown that the output pulse broadening phenomena in a string of cascaded DCFL HEMT inverters are a consequence of the inverter voltage transfer function shift caused by deep traps.

Original languageEnglish
Title of host publicationProceedings of the Custom Integrated Circuits Conference
PublisherPubl by IEEE
Pages51-54
ISBN (Print)0780300157
DOIs
StatePublished - 1 Dec 1991
EventProceedings of the IEEE 1991 Custom Integrated Circuits Conference - San Diego, CA, USA
Duration: 12 May 199115 May 1991

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Conference

ConferenceProceedings of the IEEE 1991 Custom Integrated Circuits Conference
CitySan Diego, CA, USA
Period12/05/9115/05/91

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