Mixed mode simulation of slow transient effects in AlGaAs/GaAs HEMT inverters

Ta-Hui Wang; Sheng Jyh Wu

doi:10.1109/CICC.1991.164134

Mixed mode simulation of slow transient effects in AlGaAs/GaAs HEMT inverters

Ta-Hui Wang^*, Sheng Jyh Wu

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A mixed level device and circuit analysis has been performed to study the DX-trap-induced slow transient effects on the performance degradation of AlGaAs/GaAs HEMT (high electron mobility transistor) circuits. The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in DCFL (direct coupled FET logic) HEMT inverters have been simulated. It is shown that the output pulse broadening phenomena in a string of cascaded DCFL HEMT inverters are a consequence of the inverter voltage transfer function shift caused by deep traps.

Original language	English
Title of host publication	Proceedings of the Custom Integrated Circuits Conference
Publisher	Publ by IEEE
Pages	51-54
ISBN (Print)	0780300157
DOIs	https://doi.org/10.1109/CICC.1991.164134
State	Published - 1 Dec 1991
Event	Proceedings of the IEEE 1991 Custom Integrated Circuits Conference - San Diego, CA, USA Duration: 12 May 1991 → 15 May 1991

Publication series

Name	Proceedings of the Custom Integrated Circuits Conference
ISSN (Print)	0886-5930

Conference

Conference	Proceedings of the IEEE 1991 Custom Integrated Circuits Conference
City	San Diego, CA, USA
Period	12/05/91 → 15/05/91

Access to Document

10.1109/CICC.1991.164134

Link to publication in Scopus

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Cite this

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title = "Mixed mode simulation of slow transient effects in AlGaAs/GaAs HEMT inverters",

abstract = "A mixed level device and circuit analysis has been performed to study the DX-trap-induced slow transient effects on the performance degradation of AlGaAs/GaAs HEMT (high electron mobility transistor) circuits. The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in DCFL (direct coupled FET logic) HEMT inverters have been simulated. It is shown that the output pulse broadening phenomena in a string of cascaded DCFL HEMT inverters are a consequence of the inverter voltage transfer function shift caused by deep traps.",

author = "Ta-Hui Wang and Wu, {Sheng Jyh}",

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series = "Proceedings of the Custom Integrated Circuits Conference",

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Wang, T-H & Wu, SJ 1991, Mixed mode simulation of slow transient effects in AlGaAs/GaAs HEMT inverters. in Proceedings of the Custom Integrated Circuits Conference. Proceedings of the Custom Integrated Circuits Conference, Publ by IEEE, pp. 51-54, Proceedings of the IEEE 1991 Custom Integrated Circuits Conference, San Diego, CA, USA, 12/05/91. https://doi.org/10.1109/CICC.1991.164134

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N2 - A mixed level device and circuit analysis has been performed to study the DX-trap-induced slow transient effects on the performance degradation of AlGaAs/GaAs HEMT (high electron mobility transistor) circuits. The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in DCFL (direct coupled FET logic) HEMT inverters have been simulated. It is shown that the output pulse broadening phenomena in a string of cascaded DCFL HEMT inverters are a consequence of the inverter voltage transfer function shift caused by deep traps.

AB - A mixed level device and circuit analysis has been performed to study the DX-trap-induced slow transient effects on the performance degradation of AlGaAs/GaAs HEMT (high electron mobility transistor) circuits. The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in DCFL (direct coupled FET logic) HEMT inverters have been simulated. It is shown that the output pulse broadening phenomena in a string of cascaded DCFL HEMT inverters are a consequence of the inverter voltage transfer function shift caused by deep traps.

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