Mix-and-match lithography technology on 6-in. wafers for nanofabrication

Shyi Long Shy*, Tien-Sheng Chao, C. H. Chu, T. F. Lei, Kazumitsu Nakamura, Wen An Loong, C. Y. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGilbert V. Shelden, James N. Wiley
Pages406-412
Number of pages7
DOIs
StatePublished - 1 Dec 1995
Event15th Annual BACUS Symposium on Photomask Technology and Management - Santa Clara, CA, USA
Duration: 20 Sep 199522 Sep 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2621
ISSN (Print)0277-786X

Conference

Conference15th Annual BACUS Symposium on Photomask Technology and Management
CitySanta Clara, CA, USA
Period20/09/9522/09/95

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  • Cite this

    Shy, S. L., Chao, T-S., Chu, C. H., Lei, T. F., Nakamura, K., Loong, W. A., & Chang, C. Y. (1995). Mix-and-match lithography technology on 6-in. wafers for nanofabrication. In G. V. Shelden, & J. N. Wiley (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 406-412). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2621). https://doi.org/10.1117/12.228194