Mirror-substrate AlGaInP LEDs for large-area emitter applications

D. S. Wuu, Ray-Hua Horng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In a previous study, we reported a highly efficient AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate (MS) fabricated by wafer bonding, where a planar electrode structure is used. In view of the more efficient epilayer area utilized, AlGaInP/mirror/barrier/Si LEDs with vertical electrodes are proposed in this work. A variety of barrier layers (Pt/Ti, TaN/Ta, and TiN/Ti) have been incorporated into the mirror structure. The quality of the Au/AuBe mirror after bonding is known to be a key issue in obtaining high performance MS-LEDs. The large-area AlGaInP emitters (1.2 × 1.2 mm2) show that its luminous intensity and output power can reach 6 candelas and 81 mW under an injection current of 1 A and 300 mA, respectively. The dominant wavelength shifts ∼5 nm under an injection current from 20 mA to 1 A. Based on these results, it can be concluded that the wafer-bonded AlGaInP epilayers with mirror substrates have high potential in high-brightness, high-power and large-area LED applications.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
StatePublished - 1 Jan 2003
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 12 Sep 200314 Sep 2003

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003


Conference6th Chinese Optoelectronics Symposium, COES 2003
CityHong Kong


  • Crystallography
  • Distributed Bragg reflectors
  • Electrodes
  • Gallium arsenide
  • Gold
  • Light emitting diodes
  • Mirrors
  • Substrates
  • Temperature
  • Wafer bonding

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