Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH 3 plasma treatment

Po Chun Huang, Lu An Chen, Chen Chia Chen, Jeng-Tzong Sheu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH 3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH 3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance.

Original languageEnglish
Pages (from-to)54-58
Number of pages5
JournalMicroelectronic Engineering
Volume91
DOIs
StatePublished - 1 Mar 2012

Keywords

  • Gate-all-around (GAA)
  • Multiple-channel
  • Multiple-gate
  • Plasma treatment
  • Thin-film transistors (TFTs)
  • Variation

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