Abstract
In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH 3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH 3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance.
Original language | English |
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Pages (from-to) | 54-58 |
Number of pages | 5 |
Journal | Microelectronic Engineering |
Volume | 91 |
DOIs | |
State | Published - 1 Mar 2012 |
Keywords
- Gate-all-around (GAA)
- Multiple-channel
- Multiple-gate
- Plasma treatment
- Thin-film transistors (TFTs)
- Variation