Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH 3 plasma treatment

Po Chun Huang; Lu An Chen; Chen Chia Chen; Jeng-Tzong Sheu

doi:10.1016/j.mee.2011.10.009

Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH ₃ plasma treatment

Po Chun Huang, Lu An Chen, Chen Chia Chen, Jeng-Tzong Sheu^*

^*Corresponding author for this work

Institute of Nanotechnology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH ₃ plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH ₃ plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance.

Original language	English
Pages (from-to)	54-58
Number of pages	5
Journal	Microelectronic Engineering
Volume	91
DOIs	https://doi.org/10.1016/j.mee.2011.10.009
State	Published - 1 Mar 2012

Keywords

Gate-all-around (GAA)
Multiple-channel
Multiple-gate
Plasma treatment
Thin-film transistors (TFTs)
Variation

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title = "Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH 3 plasma treatment",

abstract = "In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH 3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH 3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance.",

keywords = "Gate-all-around (GAA), Multiple-channel, Multiple-gate, Plasma treatment, Thin-film transistors (TFTs), Variation",

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AU - Chen, Chen Chia

AU - Sheu, Jeng-Tzong

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AB - In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH 3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH 3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance.

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