MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics

Hang Hu*, Chunxiang Zhu, Xiongfei Yu, Albert Chin, M. F. Li, Byung Jin Cho, Dim Lee Kwong, P. D. Foo, Ming Bin Yu, Xinye Liu, Jerry Winkler

*Corresponding author for this work

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

The metal-insulator-metal (MIM) capacitors with (HfO2)1-x(Al2O3)x high-κ dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing the mole fraction of Al2O3. It was demonstrated that the (HfO2)1-x(Al2O3)x MIM capacitor with a Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fFμm2) and low VCC values (∼ 140ppm/V2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are also obtained. Also, no electrical degradation was observed for (HfO2)1-x(Al2O3)x MIM capacitors after N2 annealing at 400 °C. All these show that the (HfO2)0.86(Al2O3)0.14 MIM capacitor is very suitable for the capacitor applications within the thermal budget of the back end of line process.

Original languageEnglish
Pages (from-to)60-62
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number2
DOIs
StatePublished - 1 Feb 2003

Keywords

  • Dispersion
  • High-κ
  • Metal-insulator-metal (MIM) capacitor
  • Thin-film devices
  • Voltage linearity

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