Millimeter-wave CMOS power amplifiers with high output power and wideband performances

Yuan Hung Hsiao, Zuo-Min Tsai , Hsin Chiang Liao, Jui Chih Kao, Huei Wang

Research output: Contribution to journalArticlepeer-review

78 Scopus citations


In this paper, we propose a design method of multi-way combining networks with impedance transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output power and wideband performance simultaneously in millimeter-wave frequency. Based on the proposed methodology, three power amplifiers are designed and fabricated in V-band, W-band, and D-band using 65-nm CMOS technology. With 1.2-V supply, the saturation powers of these power amplifiers are 23.2 dBm, 18 dBm and 13.2 dBm at 64 GHz, 90 GHz, and 140 GHz, with 25.1-GHz, 26-GHz, and 30-GHz 3-dB bandwidth, respectively. Compared with the published MMW amplifiers, these PAs achieve high output power and wide band performances simultaneously, and the ouput power levels is the state-of-the-art performance at these frequencies.

Original languageEnglish
Article number6655984
Pages (from-to)4520-4533
Number of pages14
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number12
StatePublished - 1 Dec 2013


  • CMOS
  • High output power
  • Impedance transformation
  • Millimeter-wave
  • Power amplifier
  • Power combining
  • Wideband

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