In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-κ dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V th ∼ -0.78 V, excellent subthreshold swing ∼105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.
- Gate-induced drain leakage (GIDL)
- Metalinduced lateral crystallization (MILC)
- One-time programmable (OTP)
- Thin-film transistor (TFT)