MILC-TFT with high-κ dielectrics for one-time-programmable memory application

Tsung Yu Chiang*, Ming Wen Ma, Yi Hong Wu, Po Yi Kuo, Kuan Ti Wang, Chia Chun Liao, Chi Ruei Yeh, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-κ dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V th ∼ -0.78 V, excellent subthreshold swing ∼105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.

Original languageEnglish
Pages (from-to)954-956
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number9
DOIs
StatePublished - 7 Aug 2009

Keywords

  • Gate-induced drain leakage (GIDL)
  • Metalinduced lateral crystallization (MILC)
  • One-time programmable (OTP)
  • Thin-film transistor (TFT)

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    Chiang, T. Y., Ma, M. W., Wu, Y. H., Kuo, P. Y., Wang, K. T., Liao, C. C., Yeh, C. R., & Chao, T-S. (2009). MILC-TFT with high-κ dielectrics for one-time-programmable memory application. IEEE Electron Device Letters, 30(9), 954-956. https://doi.org/10.1109/LED.2009.2027035