Microwave plasma chemical vapor deposition of cone-like structure of diamond/SiC/Si on Si (100)

Jhih Kun Yan*, Li Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

Diamond deposition on 1 × 1 cm2 Si (100) substrates with bias was carried out by microwave plasma chemical vapor deposition (MPCVD). Distribution of deposited diamonds has been significantly improved in uniformity over all the Si substrate surface area by using a novel designed dome-shaped Mo anode. The deposits were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman analysis. SEM observations show that there is a high density of cone-like particles uniformly deposited on the surface of the substrate in short bias nucleation period. The average diameter, height and density of cone-like structure were increased with methane concentration in the bias stage. TEM reveals that the cone-like structure is actually composed of Si conic crystal covered with diamond. Between Si and diamond, a thin layer of cubic SiC is found in epitaxy with Si. Furthermore, for 3% CH4 concentration, the range of diameter of cone-like structure was about 20-90 nm and the size of diamond was about 10-60 nm.

Original languageEnglish
Pages (from-to)1770-1775
Number of pages6
JournalDiamond and Related Materials
Volume14
Issue number11-12
DOIs
StatePublished - 1 Nov 2005
EventProceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue -
Duration: 11 May 200514 May 2005

Keywords

  • Diamond
  • Epitaxy
  • Nucleation
  • Transmission electron microscopy (TEM)

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