The excellent RF performance for band-pass and band-stop microwave coplanar filters at 22∼94 GHz on silicon substrates was achieved using an optimized proton implantation process. The implantation process was optimized for better compatibility with VLSI process. The equivalent circuit model was further used to analyze the substrate loss effects of the band pass filter.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 18 Aug 2003|
|Event||2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States|
Duration: 8 Jun 2003 → 13 Jun 2003