Microwave annealing of phosphorus and cluster carbon implanted (100) and (110) Si

Ta Chun Cho, Yu Lun Lu, Jie Yi Yao, Yao Jen Lee, Karuppanan Sekar, Nobuhiro Tokoro, Hiroshi Onoda, Wade Krull, Michael I. Current, Tien-Sheng Chao

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Abstract

Effects of low-temperature (≈500°C) microwave annealing (MWA) of Cluster-Carbon (C7) and Phosphorus implants are compared with rapid thermal annealing (RTA) at 900 and 1000°C for (100) and (110)-Si substrates. MWA annealing resulted in high levels of substitutional Carbon, 1.57% for (100)Si and 0.99% for (110)Si for C7 implants. Addition of high-dose Phosphorus implants resulted in lower but still useful substitutional Carbon levels, 1.44% for (100)Si and 0.68% for (110)Si after MWA. RTA annealing at higher temperatures resulted in greatly reduced substitutional Carbon levels and deeper Phosphorus junctions. The effects of subsequent anneals by MWA and RTA methods are reported. MWA is shown to be a promising method for high-channel tensile strain in nMOSFETs with a substantially lower thermal budget than RTA.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number7
DOIs
StatePublished - 15 Nov 2013

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    Cho, T. C., Lu, Y. L., Yao, J. Y., Lee, Y. J., Sekar, K., Tokoro, N., Onoda, H., Krull, W., Current, M. I., & Chao, T-S. (2013). Microwave annealing of phosphorus and cluster carbon implanted (100) and (110) Si. ECS Journal of Solid State Science and Technology, 2(7). https://doi.org/10.1149/2.010307jss