Microwave annealing

Yao Jen Lee*, T. C. Cho, S. S. Chuang, F. K. Hsueh, Y. L. Lu, P. J. Sung, S. J. Chen, C. H. Lo, C. H. Lai, Michael I. Current, Tseung-Yuen Tseng, Tien-Sheng Chao, F. L. Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, 31P, and BF 2 implants in Si substrate were annealed by MWA at temperatures below 550°C.

Original languageEnglish
Title of host publicationIon Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology
Pages123-128
Number of pages6
DOIs
StatePublished - 1 Dec 2012
Event19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain
Duration: 25 Jun 201229 Jun 2012

Publication series

NameAIP Conference Proceedings
Volume1496
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Ion Implantation Technology 2012, IIT 2012
CountrySpain
CityValladolid
Period25/06/1229/06/12

Keywords

  • dopant activation
  • low temperature
  • microwave
  • MWA
  • SPEG

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