Microwave and thermal characteristics of backside-connected flip-chip power heterojunction bipolar transistors

Pin Fan Chen; R. A. Johnson; Min Chung Ho; Wu Jing Ho; A. Sailer; Mau-Chung Chang; P. M. Asbeck

doi:10.1049/el:19961236

Microwave and thermal characteristics of backside-connected flip-chip power heterojunction bipolar transistors

Pin Fan Chen, R. A. Johnson, Min Chung Ho, Wu Jing Ho, A. Sailer, Mau-Chung Chang, P. M. Asbeck

Department of Electronics Engineering

Research output: Contribution to journal › Article

1 Scopus citations

Abstract

Measured and modelled characteristics are reported for a new geometry for contacting AlGaAs/GaAs heterojunction bipolar transistors (HBTs), which provides lower thermal resistance and lower emitter inductance than does the conventional approach. Common-emitter connected HBTs are mounted emitter side down on a metal heatsink. which also serves as electrical ground. Connections to the base and collector are made with substrate vias that extend through the GaAs substrate from the backside of the wafer. This configuration was measured to have values of thermal resistance as small as 0.23 K/mW for a 132μm ² emitter area HBT, in agreement with simulations. An output power per unit emitter area of 2.9mW/μ ² : (total power of 370mW) at 9 GHz was observed.

Original language	English
Pages (from-to)	1931-1932
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	20
DOIs	https://doi.org/10.1049/el:19961236
State	Published - 1 Jan 1996

Keywords

Flip-chip devices
Heat transfer
Heterojunction bipolar transistors

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10.1049/el:19961236

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Chen, P. F., Johnson, R. A., Ho, M. C., Ho, W. J., Sailer, A., Chang, M-C., & Asbeck, P. M. (1996). Microwave and thermal characteristics of backside-connected flip-chip power heterojunction bipolar transistors. Electronics Letters, 32(20), 1931-1932. https://doi.org/10.1049/el:19961236

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abstract = " Measured and modelled characteristics are reported for a new geometry for contacting AlGaAs/GaAs heterojunction bipolar transistors (HBTs), which provides lower thermal resistance and lower emitter inductance than does the conventional approach. Common-emitter connected HBTs are mounted emitter side down on a metal heatsink. which also serves as electrical ground. Connections to the base and collector are made with substrate vias that extend through the GaAs substrate from the backside of the wafer. This configuration was measured to have values of thermal resistance as small as 0.23 K/mW for a 132μm 2 emitter area HBT, in agreement with simulations. An output power per unit emitter area of 2.9mW/μ 2 : (total power of 370mW) at 9 GHz was observed. ",

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AU - Chen, Pin Fan

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AU - Sailer, A.

AU - Chang, Mau-Chung

AU - Asbeck, P. M.

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N2 - Measured and modelled characteristics are reported for a new geometry for contacting AlGaAs/GaAs heterojunction bipolar transistors (HBTs), which provides lower thermal resistance and lower emitter inductance than does the conventional approach. Common-emitter connected HBTs are mounted emitter side down on a metal heatsink. which also serves as electrical ground. Connections to the base and collector are made with substrate vias that extend through the GaAs substrate from the backside of the wafer. This configuration was measured to have values of thermal resistance as small as 0.23 K/mW for a 132μm 2 emitter area HBT, in agreement with simulations. An output power per unit emitter area of 2.9mW/μ 2 : (total power of 370mW) at 9 GHz was observed.

AB - Measured and modelled characteristics are reported for a new geometry for contacting AlGaAs/GaAs heterojunction bipolar transistors (HBTs), which provides lower thermal resistance and lower emitter inductance than does the conventional approach. Common-emitter connected HBTs are mounted emitter side down on a metal heatsink. which also serves as electrical ground. Connections to the base and collector are made with substrate vias that extend through the GaAs substrate from the backside of the wafer. This configuration was measured to have values of thermal resistance as small as 0.23 K/mW for a 132μm 2 emitter area HBT, in agreement with simulations. An output power per unit emitter area of 2.9mW/μ 2 : (total power of 370mW) at 9 GHz was observed.

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