Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Michael I. Current, Yao Jen Lee, Yu Lun Lu, Ta Chun Cho, Tien-Sheng Chao, Hiroshi Onoda, Karuppanan Sekar, Nobuhiro Tokoro

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

Original languageEnglish
Pages84-87
Number of pages4
DOIs
StatePublished - 1 Jan 2013
Event2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan
Duration: 6 Jun 20137 Jun 2013

Conference

Conference2013 13th International Workshop on Junction Technology, IWJT 2013
CountryJapan
CityKyoto
Period6/06/137/06/13

Keywords

  • Cluster carbon
  • Microwave anneal
  • Molecular carbon
  • Phosphorous doping

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