Microstructure of xenon−implanted silicon

S. Mader*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Si implanted with 1014, 1015, and 5×1015 ions/cm2 of 80 KeV Xe ions was examined by electron microscopy and nuclear backscattering. Implantation created amorphous Si, which, after annealing at 700°C, transformed into single crystal material for doses ?1015/cm2 and into a heavily twinned material for the higher dose. Under suitable conditions, such implants can be used as diffusion markers in the study of surface reactions.

Original languageEnglish
Pages (from-to)501-503
Number of pages3
JournalJournal of Vacuum Science and Technology
Volume12
Issue number1
DOIs
StatePublished - 1 Jan 1975

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