Microstructure and strain in GaAs/AlGaAs MQW thin films bonded to different substrates by eutectic alloying

Chun-Hsiung Lin; Hao-Chung Kuo; Y. Lu; H. Shen; J. Pamulapati; M. Dutta; J. Y. Cheng; F. Ren; J. M. Kuo

doi:10.1557/PROC-365-331

Microstructure and strain in GaAs/AlGaAs MQW thin films bonded to different substrates by eutectic alloying

Chun-Hsiung Lin^*, Hao-Chung Kuo, Y. Lu, H. Shen, J. Pamulapati, M. Dutta, J. Y. Cheng, F. Ren, J. M. Kuo

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Research of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO ₃ submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500angstrom) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

Original language	English
Pages (from-to)	331-336
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	356
DOIs	https://doi.org/10.1557/PROC-365-331
State	Published - 1 Jan 1995
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 28 Nov 1994 → 2 Dec 1994

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@article{1b31fcbb9a2e4859b2e77b2e02580224,

title = "Microstructure and strain in GaAs/AlGaAs MQW thin films bonded to different substrates by eutectic alloying",

abstract = " Research of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO 3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500angstrom) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration. ",

author = "Chun-Hsiung Lin and Hao-Chung Kuo and Y. Lu and H. Shen and J. Pamulapati and M. Dutta and Cheng, {J. Y.} and F. Ren and Kuo, {J. M.}",

year = "1995",

month = jan,

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doi = "10.1557/PROC-365-331",

language = "English",

volume = "356",

pages = "331--336",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "null ; Conference date: 28-11-1994 Through 02-12-1994",

}

Microstructure and strain in GaAs/AlGaAs MQW thin films bonded to different substrates by eutectic alloying. / Lin, Chun-Hsiung ; Kuo, Hao-Chung; Lu, Y.; Shen, H.; Pamulapati, J.; Dutta, M.; Cheng, J. Y.; Ren, F.; Kuo, J. M.

In: Materials Research Society Symposium - Proceedings, Vol. 356, 01.01.1995, p. 331-336.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Microstructure and strain in GaAs/AlGaAs MQW thin films bonded to different substrates by eutectic alloying

AU - Lin, Chun-Hsiung

AU - Kuo, Hao-Chung

AU - Lu, Y.

AU - Shen, H.

AU - Pamulapati, J.

AU - Dutta, M.

AU - Cheng, J. Y.

AU - Ren, F.

AU - Kuo, J. M.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Research of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO 3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500angstrom) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

AB - Research of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO 3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500angstrom) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

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DO - 10.1557/PROC-365-331

M3 - Conference article

AN - SCOPUS:0029234589

VL - 356

SP - 331

EP - 336

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 28 November 1994 through 2 December 1994

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