Microstructure and strain in GaAs/AlGaAs MQW thin films bonded to different substrates by eutectic alloying

Chun-Hsiung Lin*, Hao-Chung Kuo, Y. Lu, H. Shen, J. Pamulapati, M. Dutta, J. Y. Cheng, F. Ren, J. M. Kuo

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Research of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO 3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500angstrom) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

Original languageEnglish
Pages (from-to)331-336
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume356
DOIs
StatePublished - 1 Jan 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: 28 Nov 19942 Dec 1994

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