Highly (0 0 2) c-axis-oriented AlN films have been successfully deposited on Ti/Si substrates using reactive magnetron radio frequency (RF) sputtering deposition and ideal AlN films could be obtained by fine-tuning the parameters at pressure 5 Pa, temperature of 250 °C, and N2 ratio 85%. The detailed layer-by-layer microstructure of AlN films deposited on Ti/Si substrate consists of TiO2 thin film, amorphous layer without Al 2O3 particles, transition layer, and the columnar (0 0 2) c-axis preferred orientation layer. AlN films possessing a higher deposition rate to form an amorphous layer in the initial deposition stage will result in the lower deposition rate to form following transition and columnar preferred orientation textures. Therefore, we strongly suggest adopting a two-step deposition method, that is, use lower deposition rate to form preferred orientation layers and then a higher deposition rate to form preferred orientation textures.
- A1. Growth mechanism
- A1. Transmission electron microscopy
- A3. Reactive sputtering
- B2. Aluminum nitride