Microstructural evolution and electrical property of Ta-doped SnO2 films grown on Al2O3(0001) by metalorganic chemical vapor deposition

Young Woon Kim, Sang W. Lee, Haydn Chen

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37 Scopus citations


Ta-doped tin oxide, SnO2, films have been deposited using metalorganic chemical vapor deposition system on sapphire (0001) substrates in temperature range of 400-600°C. When Ta concentration is varied from 0 to 8.30 at.% in the films, the electrical resistivity is changed by three orders of magnitude where the minimum resistivity was observed at 1.35% of Ta. An increase in the carrier concentration is a dominant factor responsible for such a large decrease in the resistivity while improved crystalinity contributes to the improvement in the mobility among doped samples. Microstructural investigation revealed the Ta-doped film showed a clean epitaxial relationship of SnO2(100)//Al2O3(0001) with SnO2[100]//Al2O3〈12̄10〉 between the substrate and the film while undoped film had a weak epitaxial correlation with an extra epitaxial relationship of SnO2(100)//Al2O3(0001) with SnO2[010]//Al2O3〈11̄00〉.

Original languageEnglish
Pages (from-to)256-262
Number of pages7
JournalThin Solid Films
Issue number1-2
StatePublished - 22 Feb 2002


  • Epitaxy
  • SnO
  • Ta-doping

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