Microphotoluminescence spectra of hillocks in Al0.11Ga 0.89N films

W. C. Ke*, C. S. Ku, H. Y. Huang, W. C. Chen, L. Lee, Wei-Kuo Chen, Wu-Ching Chou, W. H. Chen, M. C. Lee, W. J. Lin, Y. C. Cheng, Y. T. Cherng

*Corresponding author for this work

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Abstract

The spatial variation of the optical properties of hillocks in Al 0.11Ga0.89N films has been studied by using microphotoluminescence (μ-PL) microscopy. The μ-PL spectrum revealed a strong emission (IH) at 351 nm from the hillock, besides the near-band-edge emission (Inbe) at 341 nm. Moreover, the IH intensity increases significantly and its full width at half maximum decreases from ∼76 to ∼53 meV by probing across the hillock center. These indicated that the hillock structure is a strong emission center. The temperature-dependent μ-PL measurements showed that the IH also has the S-shape behavior with a transition temperature of ∼120 K which is lower than that of Inbe. The redshift of IH is also smaller than Inbe. Both indicated that the Al composition in hillocks is lower than the surrounding area.

Original languageEnglish
Pages (from-to)3047-3049
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
StatePublished - 11 Oct 2004

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