Microcrystalline β-SiC growth on Si by ECR-CVD at 500°C

Kuan Lun Cheng*, Chih Chien Liu, Huang-Chung Cheng, Chiapyng Lee, Tri Rung Yew

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Microcrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH4-CH4-H2 gas mixture. The effects of two important parameters on film growth, SiH4/CH4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.

Original languageEnglish
Pages (from-to)799-803
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1 Jan 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: 28 Nov 19942 Dec 1994

Fingerprint Dive into the research topics of 'Microcrystalline β-SiC growth on Si by ECR-CVD at 500°C'. Together they form a unique fingerprint.

Cite this