Micro-photoluminescence from a single InGaN-based nano-pillar fabricated by focused ion beam milling

H. H. Yen, C. H. Chiu, Peichen Yu, C. C. Kao, C. Lin, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang, W. Y. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation.

Original languageEnglish
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - 15 Sep 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: 4 May 20089 May 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Conference

ConferenceConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
CountryUnited States
CitySan Jose, CA
Period4/05/089/05/08

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