Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations

Yu Chen Hu, Cheng Hao Chiang, Kuo Hua Chen, Chi Tsung Chiu, Ching Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho Ming Tong, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching, pressure, and RF bias were studied to investigate the process of micro-masking removal.

Original languageEnglish
Title of host publication2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
Pages367-369
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan
Duration: 24 Oct 201226 Oct 2012

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
CountryTaiwan
CityTaipei
Period24/10/1226/10/12

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