Micro-fabrication of hemispherical poly-silicon shells standing on hemispherical cavities

Cheng Hsuan Lin*, Yi Chung Lo, Wen-Syang Hsu

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

In the current paper, the fabrication process of a novel proposed hemispherical polysilicon shell standing on a hemispherical silicon cavity is demonstrated. This micro-fabrication process combines both bulk and surface micromachining, which include the isotropic wet etching, a novel mask design, the thick photo resist coating and exposure, and high-aspect-ratio curved sacrificial technique. In isotropic wet etching of a hemispherical cavity, the optimal concentration of etchant is experimentally determined along with adequate ultrasonic vibration during wet etching to produce the circle-like of hemispherical cavity. The conventional alignment mark, which will be destroyed during the rather long isotropic wet etching process, is replaced by a novel mask design with the second alignment mark. Also, for a deep hemispherical cavity larger than 100 μm, the traditional photo resist can not be coated on the corner surface well. The thick photo resist, AZ4620, is found to be able to overcome this problem and be successfully exposed all through its bottom surface. Furthermore, the deposited sacrificial layer materials (PSG) on this cavity will usually result in thinner layer near the corner. In addition, the curved gap of PSG layer has the feature with high-aspect-ratio. These make the PSG etching difficult. Therefore, two steps etching process with two different hydrofluoric concentrations are used to release the PSG with 2 μm thickness and 150 μm arc length.

Original languageEnglish
Pages (from-to)514-524
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4592
DOIs
StatePublished - 1 Dec 2001
EventDevice and Process Technologies for MEMS and Microelectronics II - Adelaide, Australia
Duration: 17 Dec 200119 Dec 2001

Keywords

  • Hemispherical cavity
  • High-aspect-ratio
  • Isotropic wet etching
  • Polysilicon shells

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