Mg-induced terahertz transparency of indium nitride films

Hyeyoung Ahn*, J. W. Chia, H. M. Lee, Y. L. Hong, S. Gwo

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Terahertz time-domain spectroscopy (THz-TDS) has been used to investigate electrical properties of Mg-doped indium nitride (InN). Mg-doping in InN was found to significantly increase terahertz transmittance. THz-TDS analysis based on the Drude model shows that this high transmittance from Mg-doped InN is mainly due to the reduction in mobility associated with ionized dopants. The Hall-effect-measured mobility is typically lower than the THz-TDS-measured mobility for the same samples. However, the results of both measurements have the same slope in the linear relation between mobility and density. By introducing a compensation ratio of ∼0.2, an excellent agreement in mobilities of two methods is obtained.

Original languageEnglish
Article number232117
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
StatePublished - 5 Dec 2011

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    Ahn, H., Chia, J. W., Lee, H. M., Hong, Y. L., & Gwo, S. (2011). Mg-induced terahertz transparency of indium nitride films. Applied Physics Letters, 99(23), [232117]. https://doi.org/10.1063/1.3669538