Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Chen-Ming Hu; Yueh Chin Lin; Edward Yi Chang

doi:10.1109/LED.2016.2594802

Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Chen-Ming Hu, Yueh Chin Lin, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Accurate determination of the flat band voltage (V_FB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine V_FB of the In_0.53Ga_0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted V_FB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.

Original language	English
Article number	7523898
Pages (from-to)	1100-1103
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1109/LED.2016.2594802
State	Published - 1 Sep 2016

Keywords

C-V hysteresis
effective work function
flat band voltage
High mobility III-V semiconductor
interface trap density

Access to Document

10.1109/LED.2016.2594802

Fingerprint Dive into the research topics of 'Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials'. Together they form a unique fingerprint.

Cite this

@article{380d5ac890524de7aa54468545ef82d9,

title = "Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials",

abstract = "Accurate determination of the flat band voltage (VFB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine VFB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted VFB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.",

keywords = "C-V hysteresis, effective work function, flat band voltage, High mobility III-V semiconductor, interface trap density",

author = "Do, {Huy Binh} and Luc, {Quang Ho} and Ha, {Minh Thien Huu} and Huynh, {Sa Hoang} and Chen-Ming Hu and Lin, {Yueh Chin} and Chang, {Edward Yi}",

year = "2016",

month = sep,

day = "1",

doi = "10.1109/LED.2016.2594802",

language = "English",

volume = "37",

pages = "1100--1103",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

AU - Do, Huy Binh

AU - Luc, Quang Ho

AU - Ha, Minh Thien Huu

AU - Huynh, Sa Hoang

AU - Hu, Chen-Ming

AU - Lin, Yueh Chin

AU - Chang, Edward Yi

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Accurate determination of the flat band voltage (VFB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine VFB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted VFB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.

AB - Accurate determination of the flat band voltage (VFB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine VFB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted VFB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.

KW - C-V hysteresis

KW - effective work function

KW - flat band voltage

KW - High mobility III-V semiconductor

KW - interface trap density

UR - http://www.scopus.com/inward/record.url?scp=84984821799&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2594802

DO - 10.1109/LED.2016.2594802

M3 - Article

AN - SCOPUS:84984821799

VL - 37

SP - 1100

EP - 1103

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

M1 - 7523898

ER -