Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Chen-Ming Hu, Yueh Chin Lin, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Accurate determination of the flat band voltage (VFB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine VFB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted VFB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.

Original languageEnglish
Article number7523898
Pages (from-to)1100-1103
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number9
DOIs
StatePublished - 1 Sep 2016

Keywords

  • C-V hysteresis
  • effective work function
  • flat band voltage
  • High mobility III-V semiconductor
  • interface trap density

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