Methodology of self-heating free parameter extraction and circuit simulation for SOI CMOS

H. Nakayama, Pin Su, Chen-Ming Hu, M. Nakamura, H. Komatsu, K. Takeshita, Y. Komatsu

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Novel SOI (Silicon On Insulator) model parameter extraction methodology based on the concept of SHE (Self-Heating Effect) free device modeling, is proposed and demonstrated for a 0.18μm PD (Partially Depleted) SOI technology. In this methodology, prior to SPICE parameter extraction, the device thermal resistances are measured and the current loss due to SHE is added back analytically to dc IV data. Therefore, the parameters are free from SHE. Dc, ac, and transient simulation results using this technology show good agreement with measurement data.

Original languageEnglish
Pages (from-to)381-384
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 1 Jan 2001

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