Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, S. T. Yan, Y. C. Chang, H. Aoki, S. M. Sze, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O2)(O2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O2O2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O2O2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O2O2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality

Original languageEnglish
Pages (from-to)1196-1201
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
DOIs
StatePublished - 1 May 2004

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