Abstract
We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature- dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.
| Original language | English |
|---|---|
| Pages (from-to) | 3774-3777 |
| Number of pages | 4 |
| Journal | Optics Letters |
| Volume | 40 |
| Issue number | 16 |
| DOIs | |
| State | Published - 1 Jan 2015 |
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Tzou, B. W., Wu, J. Y., Lee, Y. S., & Lin, S-D. (2015). Method to evaluate afterpulsing probability in single-photon avalanche diodes. Optics Letters, 40(16), 3774-3777. https://doi.org/10.1364/OL.40.003774