Abstract
We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature- dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.
Original language | English |
---|---|
Pages (from-to) | 3774-3777 |
Number of pages | 4 |
Journal | Optics Letters |
Volume | 40 |
Issue number | 16 |
DOIs | |
State | Published - 1 Jan 2015 |