Method to evaluate afterpulsing probability in single-photon avalanche diodes

Bo Wei Tzou; Jau Yang Wu; Yi Shan Lee; Sheng-Di Lin

doi:10.1364/OL.40.003774

Method to evaluate afterpulsing probability in single-photon avalanche diodes

Bo Wei Tzou, Jau Yang Wu, Yi Shan Lee, Sheng-Di Lin^*

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature- dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.

Original language	English
Pages (from-to)	3774-3777
Number of pages	4
Journal	Optics Letters
Volume	40
Issue number	16
DOIs	https://doi.org/10.1364/OL.40.003774
State	Published - 1 Jan 2015

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abstract = "We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature- dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.",

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AU - Lee, Yi Shan

AU - Lin, Sheng-Di

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AB - We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature- dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.

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