Method to evaluate afterpulsing probability in single-photon avalanche diodes

Bo Wei Tzou, Jau Yang Wu, Yi Shan Lee, Sheng-Di Lin*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature- dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.

Original languageEnglish
Pages (from-to)3774-3777
Number of pages4
JournalOptics Letters
Volume40
Issue number16
DOIs
StatePublished - 1 Jan 2015

Fingerprint Dive into the research topics of 'Method to evaluate afterpulsing probability in single-photon avalanche diodes'. Together they form a unique fingerprint.

  • Cite this