Method for extracting gate-voltage-dependent source injection resistance of modified Schottky barrier (MSB) MOSFETs

Bing-Yue Tsui*, Chi Pei Lu, Hsiao Han Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The modified Schottky barrier (MSB) MOSFET with low-resistance metal source/drain and good short-channel effect immunity is one of the promising nanoscale device structures. In this letter, a modified external load resistance method was proposed to extract the bias-dependent source injection resistance of the MSB MOSFET for the first time. The effect of the thermal budget of the MSB process on the source injection resistance is reported. The injection resistance is exponentially proportional to VGS - Vth - 0.5VDS and would be close to the source/drain resistance of conventional MOSFETs at high gate bias. This work provides a good method to directly evaluate the efficiency of the MSB junction.

Original languageEnglish
Pages (from-to)1053-1055
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number9
DOIs
StatePublished - 5 Sep 2008

Keywords

  • Carrier injection
  • Implantation-to-silicide (ITS)
  • Modified Schottky barrier (MSB)
  • Multigate FET (MuGFET)

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