Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

C. K. Shu; W. H. Lee; Y. C. Pan; H. Y. Huang; H. H. Chen; W. H. Chen; Wei-Kuo Chen; M. C. Lee

Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

C. K. Shu^*, W. H. Lee, Y. C. Pan, H. Y. Huang, H. H. Chen, W. H. Chen, Wei-Kuo Chen, M. C. Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.

Original language	English
Pages (from-to)	521-526
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4078
State	Published - 1 Jan 2000
Event	Optoelectronic Materials and Devices II - Taipei, Taiwan Duration: 26 Jul 2000 → 28 Jul 2000

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title = "Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy",

abstract = "The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.",

author = "Shu, {C. K.} and Lee, {W. H.} and Pan, {Y. C.} and Huang, {H. Y.} and Chen, {H. H.} and Chen, {W. H.} and Wei-Kuo Chen and Lee, {M. C.}",

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volume = "4078",

pages = "521--526",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy. / Shu, C. K.; Lee, W. H.; Pan, Y. C.; Huang, H. Y.; Chen, H. H.; Chen, W. H.; Chen, Wei-Kuo; Lee, M. C.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4078, 01.01.2000, p. 521-526.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

AU - Shu, C. K.

AU - Lee, W. H.

AU - Pan, Y. C.

AU - Huang, H. Y.

AU - Chen, H. H.

AU - Chen, W. H.

AU - Chen, Wei-Kuo

AU - Lee, M. C.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.

AB - The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.

UR - http://www.scopus.com/inward/record.url?scp=0033725803&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033725803

VL - 4078

SP - 521

EP - 526

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

Y2 - 26 July 2000 through 28 July 2000

ER -

Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

Abstract

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