Metastability in slow thin-film reactions

King-Ning Tu*, S. R. Herd, U. Gösele

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The phenomenon of slow amorphization during a constant-temperature and constant-pressure thin-film reaction is explained by a kinetic model emphasizing the rate of transition. We assume that the reaction obeys a maximum time-dependent rather than time-independent negative free-energy change. The product persists in the metastable state due to a high activation barrier to later transition. An amorphous Rh-Si alloy formed by thermally reacting a crystalline Rh thin film and single-crystal Si is reported.

Original languageEnglish
Pages (from-to)1198-1201
Number of pages4
JournalPhysical Review B
Volume43
Issue number1
DOIs
StatePublished - 1 Jan 1991

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