Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization

M. H. Tsai*, S. C. Sun, Hsin-Tien Chiu, C. E. Tsai, S. H. Chuang

*Corresponding author for this work

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Abstract

We deposited tantalum nitride (TaN) films by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the "TaN" portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 mΩ cm (deposited at 500°C) to 920 μΩ cm (obtained at 650°C). The carbon and oxygen concentrations were low in the films deposited at 600°C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1 Dec 1995

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