Metalorganic chemical vapor deposition of insb using trineopentylindium

Jyh-Cheng Chen, Wei-Kuo Chen, Pao Lo Liu, J. Maloney, O. T. Beachley

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp^ has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp^. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.

Original languageEnglish
Pages (from-to)21-24
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume877
DOIs
StatePublished - 18 May 1988

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