Metallurgical challenges in microelectronic 3D IC packaging technology for future consumer electronic products

King-Ning Tu*, Tian Tian

*Corresponding author for this work

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technology are discussed. Using uni-directional <111> oriented nanotwinned Cu, the controlled growth of oriented Cu66n5 on the nanotwinned Cu and its transformation to Cu3Sn without Kirkendall voids have been achieved. In order to join a stack of Si chips into a 3D device, multiple reflows of solder microbumps may be required; we consider localized heating to do so by the use of self-sustained explosive reaction in multi-layered Al/Ni thin films of nano thickness. It avoids re-melting of those solder joints which have been formed already in the 3D stacking structure.

Original languageEnglish
Pages (from-to)1740-1748
Number of pages9
JournalScience China Technological Sciences
Volume56
Issue number7
DOIs
StatePublished - 1 Jul 2013

Keywords

  • 3D IC packaging
  • localized heating
  • microbump

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