Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires

Wei Che Hsu, Chao Chun Chen, Yong Han Lin*, Huang Kai Lin, Hsin-Tien Chiu, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations


We report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs. Surprisingly, we find that the effect due to the interference processes between the elastic electron scattering and the electron-phonon scattering largely dominates over the usual Boltzmann transport even at room temperature. Such prominent electron-phonon-impurity interference effect is ascribed to the presence of large amounts of disorder and high Debye temperatures in TiSi NWs.

Original languageEnglish
Article number500
JournalNanoscale Research Letters
StatePublished - 17 Sep 2012


  • Chemical vapor deposition reaction
  • Electron-phonon-impurity interference
  • Electron-photon scattering
  • Focused-ion-beam-induced deposition
  • Silicide
  • TiSi nanowire

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