Metal-to-Metal Antifuses with Very thin Silicon Dioxide Films

G. Zhang, P. Yu, Chen-Ming Hu, E. Hamdy, S. Chiang

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength as high as 13 MV/cm was obtained for our samples. Defect density and uniformity have been improved this way. The on-state resistance of the programmed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programmed at the higher current.

Original languageEnglish
Pages (from-to)310-312
Number of pages3
JournalIEEE Electron Device Letters
Volume15
Issue number8
DOIs
StatePublished - 1 Jan 1994

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