Metal silicon interfacial reactions in SOI

King-Ning Tu*, H. K. Liou

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

Silicon-on-insulator (SOI) wafers have the potential of making low power, high speed, and radiation hardened devices. Using a radius of curvature technique, the in-plane biaxial stresses in the superficial silicon layer and the buried oxide layer in a SOI wafer were measured. Stresses with and without the formation of TiSi2 were considered.

Original languageEnglish
Pages530-531
Number of pages2
StatePublished - 1 Dec 1995
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 24 Oct 199528 Oct 1995

Conference

ConferenceProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period24/10/9528/10/95

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    Tu, K-N., & Liou, H. K. (1995). Metal silicon interfacial reactions in SOI. 530-531. Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .