Silicon-on-insulator (SOI) wafers have the potential of making low power, high speed, and radiation hardened devices. Using a radius of curvature technique, the in-plane biaxial stresses in the superficial silicon layer and the buried oxide layer in a SOI wafer were measured. Stresses with and without the formation of TiSi2 were considered.
|Number of pages||2|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China|
Duration: 24 Oct 1995 → 28 Oct 1995
|Conference||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology|
|Period||24/10/95 → 28/10/95|