Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi 2 nanowires and 4. self-assembled growth of NiSi 2 and α-FeSi 2 nanowires by nitride mediated epitaxy.
|Title of host publication||ECS Transactions - Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD|
|Number of pages||4|
|State||Published - 1 Dec 2007|
|Event||1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting - Washington, DC, United States|
Duration: 7 Oct 2007 → 12 Oct 2007
|Conference||1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting|
|Period||7/10/07 → 12/10/07|