Metal silicide nanowires

L. J. Chen, Wen-Wei Wu, H. C. Hsu, S. Y. Chen, Y. L. Chueh, L. J. Chou, K. C. Lu, King-Ning Tu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi 2 nanowires and 4. self-assembled growth of NiSi 2 and α-FeSi 2 nanowires by nitride mediated epitaxy.

Original languageEnglish
Title of host publicationECS Transactions - Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD
Pages3-6
Number of pages4
Edition8
DOIs
StatePublished - 1 Dec 2007
Event1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number8
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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