Metal-semiconductors-metal traveling wave photodetectors

Jin Wei Shi*, Yen Hung Chen, Tzu Ming Liu, Ming-Che Chan, Kian Giap Gan, Yi Jen Chiu, John E. Bowers, Chi Kuang Sun

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

Low-temperature-grown GaAs (LTG-GaAs) based photodetectors (PDs) draw significant attention due to their ultrahigh electrical bandwidth performances. A review is given of the advantages and applications of LTG-GaAs based metal-semiconductor-metal traveling wave photodetectors (MSMTWPDs). The ultra-high speed and record high power-bandwidth product performances in both short (∼800nm) and long (∼1300nm) wavelength regimes are discussed.

Original languageEnglish
Pages (from-to)445-446
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
DOIs
StatePublished - 1 Dec 2002
Event2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom
Duration: 10 Nov 200214 Nov 2002

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