Low-temperature-grown GaAs (LTG-GaAs) based photodetectors (PDs) draw significant attention due to their ultrahigh electrical bandwidth performances. A review is given of the advantages and applications of LTG-GaAs based metal-semiconductor-metal traveling wave photodetectors (MSMTWPDs). The ultra-high speed and record high power-bandwidth product performances in both short (∼800nm) and long (∼1300nm) wavelength regimes are discussed.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - 1 Dec 2002|
|Event||2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom|
Duration: 10 Nov 2002 → 14 Nov 2002