Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen

Hsin-Tien Chiu*, Chun Nan Wang, Shiow Huey Chuang

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The use of tert-butylimidotrisidiethylamido)tantalum (TBDTDET) as a precursor to grow tantalum oxide thin films by chemical vapor deposition (CVD) for device application was demonstrated. Using this precursor, a Ta2O5 film with a thickness of 180 nm had a leakage current density below 1×10-8 A cm-2 for an electric field strength of 2 MV cm-1, and a breakdown voltage of 3 MV cm-1. The dielectric constant was 22.

Original languageEnglish
Pages (from-to)223-225
Number of pages3
JournalChemical Vapor Deposition
Volume6
Issue number5
DOIs
StatePublished - 1 Oct 2000

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