The use of tert-butylimidotrisidiethylamido)tantalum (TBDTDET) as a precursor to grow tantalum oxide thin films by chemical vapor deposition (CVD) for device application was demonstrated. Using this precursor, a Ta2O5 film with a thickness of 180 nm had a leakage current density below 1×10-8 A cm-2 for an electric field strength of 2 MV cm-1, and a breakdown voltage of 3 MV cm-1. The dielectric constant was 22.
|Number of pages||3|
|Journal||Chemical Vapor Deposition|
|State||Published - 1 Oct 2000|