Metal-organic chemical vapor deposition of NbxTa(1-x)NyOmCn films as diffusion barriers for Cu metallization

W. C. Gau, C. W. Wu, T. C. Chang, Po-Tsun Liu, C. J. Chu, C. H. Chen, L. J. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

NbxTa(1-x)NyOmCn diffusion barriers deposited by chemical vapor deposition (CVD) for copper metallization have been investigated. The barriers were deposited at 375 °C with tetrakis-diethylamido-niobium and pentakis-diethylamido-tantalum as precursors. Amorphous thin films can be obtained by thermal deposition at temperatures from 500 to 600 °C. The activation energy of the metal-organic CVD (MOCVD) process was determined to be 79.1±4.8 kJ/mol. By the incorporation of NH3 gas into reactants, both MOCVD deposition temperature and carbon concentration in the NbxTa(1-x)NyOmCn films were reduced. In addition, NH3-plasma post-treatment was implemented to prevent oxygen from being introduced into the barrier films.

Original languageEnglish
Pages (from-to)548-552
Number of pages5
JournalThin Solid Films
Volume420-421
DOIs
StatePublished - 2 Dec 2002

Keywords

  • Chemical vapor deposition
  • Cu metallization
  • Diffusion barrier
  • Nb
  • Nitride
  • Ta

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