Metal nanocrystals as charge storage nodes for nonvolatile memory devices

P. H. Yeh, L. J. Chen*, Po-Tsun Liu, D. Y. Wang, T. C. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum IG Write/Erase/IG Retention ratio can be obtained.

Original languageEnglish
Pages (from-to)2920-2926
Number of pages7
JournalElectrochimica Acta
Volume52
Issue number8 SPEC. ISS.
DOIs
StatePublished - 10 Feb 2007

Keywords

  • CoSi nanocrystals
  • Metal nanocrystals
  • Ni nanocrystals
  • NiSi nanocrystals
  • Nonvolatile memory

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