Metal-insulator-metal photodetectors with Ge quantum dots formed by selective oxidation of single crystalline-Si0.85Ge 0.15/Si-on-insulator

S. S. Tzeng*, Pei-Wen Li, W. M. Liao, W. T. Lia

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Original languageEnglish
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
StatePublished - 1 Dec 2006
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: 15 May 200617 May 2006

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Conference

ConferenceThird International SiGe Technology and Device Meeting, ISTDM 2006
CountryUnited States
CityPrinceton, NJ
Period15/05/0617/05/06

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